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?2005 silicon storage technology, inc. s71171-10-eol 3/05 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. mpf and combomemory are trademarks of silicon storage technology, inc. these specifications are subject to change without notice. eol product data sheet features: ? mpf + sram combomemory ? sst32hf162: 1m x16 flash + 128k x16 sram ? sst32hf164: 1m x16 flash + 256k x16 sram single 2.7-3.3v read and write operations concurrent operation ? read from or write to sram while erase/program flash superior reliability ? endurance: 100,000 cycles (typical) ? greater than 100 years data retention low power consumption: ? active current: 15 ma (typical) for flash or sram read ? standby current: 20 a (typical) flexible erase capability ? uniform 2 kword sectors ? uniform 32 kword size blocks fast read access times: ? flash: 70 ns ?sram: 70 ns latched address and data for flash flash fast erase and word-program: ? sector-erase time: 18 ms (typical) ? block-erase time: 18 ms (typical) ? chip-erase time: 70 ms (typical) ? word-program time: 14 s (typical) ? chip rewrite time: sst32hf162/164: 15 seconds (typical) flash automatic erase and program timing ? internal v pp generation flash end-of-write detection ? toggle bit ? data# polling cmos i/o compatibility jedec standard command set package available ? 48-ball lbga (10mm x 12mm) product description the sst32hf162/164 combomemory devices integrate a 1m x16 cmos flash memory bank with a 128k x16 or 256k x16 cmos sram memory bank in a multi-chip package (mcp), manufactured with sst?s proprietary, high performance superflash technology. featuring high performance word-program, the flash memory bank provides a maximum word-program time of 14 sec. the entire flash memory bank can be erased and programmed word-by-word in 15 seconds (typically) for the sst32hf162/164, when using interface features such as toggle bit or data# polling to indicate the completion of program operation. to protect against inadvertent flash write, the sst32hf162/164 devices contain on-chip hard- ware and software data protection schemes. the sst32hf162/164 devices offer a guaranteed endurance of 10,000 cycles. data retention is rated at greater than 100 years. the sst32hf162/164 devices consist of two independent memory banks with respective bank enable signals. the flash and sram memory banks are superimposed in the same memory address space. both memory banks share common address lines, data lines, we# and oe#. the memory bank selection is done by memory bank enable signals. the sram bank enable signal, bes# selects the sram bank. the flash memory bank enable signal, bef# selects the flash memory bank. the we# signal has to be used with software data protection (sdp) command sequence when controlling the erase and program opera- tions in the flash memory bank. the sdp command sequence protects the data stored in the flash memory bank from accidental alteration. the sst32hf162/164 provide the added functionality of being able to simultaneously read from or write to the sram bank while erasing or programming in the flash memory bank. the sram memory bank can be read or written while the flash memory bank performs sector- erase, bank-erase, or word-program concurrently. all flash memory erase and prog ram operations will automati- cally latch the input address and data signals and complete the operation in background without further input stimulus requirement. once the internally controlled erase or pro- gram cycle in the flash bank has commenced, the sram bank can be accessed for read or write. the sst32hf162/164 devices are suited for applications that use both flash memory and sram memory to store code or data. for systems requiring low power and small form factor, the sst32hf162/164 devices significantly improve performance and reliab ility, while lowering power consumption, when compared with multiple chip solutions. the sst32hf162/164 inherently use less energy during erase and program than alternative flash technologies. the total energy consumed is a function of the applied voltage, multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 sst32hf162 / 16416mb flash + 2mb sram, 16mb flash + 4mb sram (x16) mcp combomemory
2 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 current, and time of application. since for any given voltage range, the superflash technology uses less current to pro- gram and has a shorter erase time, the total energy con- sumed during any erase or program operation is less than alternative flash technologies. superflash technology provides fixed erase and pro- gram times, independent of the number of erase/pro- gram cycles that have occurred. therefore the system software or hardware does not have to be modified or de- rated as is necessary with alternative flash technologies, whose erase and program times increase with accumu- lated erase/program cycles. device operation the combomemory uses bes# and bef# to control oper- ation of either the sram or the flash memory bank. when bes# is low, the sram bank is activated for read and write operation. when bef# is low the flash bank is acti- vated for read, program or erase operation. bes# and bef# cannot be at low level at the same time. if bes# and bef# are both asserted to low level bus contention will result and the device may suffer permanent damage. all address, data, and control lines are shared by sram bank and flash bank which mi nimizes power consumption and loading. the device goes into standby when both bank enables are high. sram operation with bes# low and bef# high, the sst32hf162 operate as 128k x16 cmos sram, and the sst32hf164 oper- ates as 256k x16 cmos sram, with fully static operation requiring no external clocks or timing strobes. the sst32hf162 sram is mapped into the first 128 kword address space of the device, and the sst32hf164 sram is mapped into the first 256 kword address space. when bes# and bef# are high, both memory banks are dese- lected and the device enters standby mode. read and write cycle times are equal. the control signals ubs# and lbs# provide access to the upper data byte and lower data byte. see table 3 for sram read and write data byte con- trol modes of operation. sram read the sram read operation of the sst32hf162/164 is controlled by oe# and bes#, both have to be low with we# high for the system to obtain data from the outputs. bes# is used for sram bank selection. oe# is the output control and is used to gate data from the output pins. the data bus is in high impedance state when oe# is high. see figure 2 for the read cycle timing diagram. sram write the sram write operation of the sst32hf162/164 is controlled by we# and bes# being low for the system to write to the sram. during the word-write operation, the addresses and data are referenced to the rising edge of we# or bes#, which ever occurs first. the write time is measured from the last falling edge to the rising edge of we# or bes#. refer to the write cycle timing diagrams, figures 3 and 4, for further details. flash operation with bef# active, the sst32hf162/164 operate as 1m x16 flash memory. the flash memory bank is read using the common address lines, data lines, we# and oe#. erase and program operations are initiated with the jedec standard sdp command sequences. address and data are latched during the sdp commands and during the internally timed erase and program operations. flash read the read operation of the sst32hf162/164 devices is controlled by bef# and oe#. both have to be low, with we# high, for the system to obtain data from the outputs. bef# is used for flash memory bank selection. when bef# and bes# are high, both banks are deselected and only standby power is consumed. oe# is the output con- trol and is used to gate data from the output pins. the data bus is in high impedance state when oe# is high. refer to figure 5 for further details. flash erase/program operation sdp commands are used to initiate the flash memory bank program and erase operations of the sst32hf162/164. sdp commands are loaded to the flash memory bank using standard microprocessor write sequences. a com- mand is loaded by asserting we# low while keeping bef# low and oe# high. the address is latched on the falling edge of we# or bef#, whichever occurs last. the data is latched on the rising edge of we# or bef#, whichever occurs first. flash word-program operation the flash memory bank of the sst32hf162/164 devices is programmed on a word-by-word basis. before program operations, the memory must be erased first. the program operation consists of three steps. the first step is the three- byte load sequence for software data protection. the sec- ond step is to load word address and word data. during the word-program operation, the addresses are latched on the falling edge of either bef# or we#, whichever occurs last.
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 3 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 the data is latched on the rising edge of either bef# or we#, whichever occurs first. the third step is the internal program operation which is initiated after the rising edge of the fourth we# or bef#, whichever occurs first. the pro- gram operation, once initiat ed, will be completed, within 20 s. see figures 6 and 7 for we# and bef# controlled pro- gram operation timing diagrams and figure 17 for flow- charts. during the program operation, the only valid flash read operations are data# polling and toggle bit. during the internal program operation, the host is free to perform additional tasks. any sdp commands loaded during the internal program operation will be ignored. flash sector/block- erase operation the flash sector/block-erase operation allows the system to erase the device on a sector-by-sector (or block-by- block) basis. the sst32hf162/164 offer both sector- erase and block-erase mode. the sector architecture is based on uniform sector size of 2 kword. the block-erase mode is based on uniform block size of 32 kword. the sector-erase operation is initiated by executing a six-byte command sequence with sector-erase command (30h) and sector address (sa) in the last bus cycle. the address lines a 19 -a 11 , for sst32hf162/164, are used to determine the sector address. the block-erase operation is initiated by executing a six-byte command sequence with block- erase command (50h) and block address (ba) in the last bus cycle. the address lines a 19 -a 15 , for sst32hf162/ 164, are used to determine the block address. the sector or block address is latched on the falling edge of the sixth we# pulse, while the command (30h or 50h) is latched on the rising edge of the sixth we# pulse. the internal erase operation begins after the sixth we# pulse. the end-of- erase operation can be determined using either data# polling or toggle bit methods. see figures 11 and 12 for timing waveforms. any commands issued during the sec- tor- or block-erase operation are ignored. flash chip-erase operation the sst32hf162/164 provide a chip-erase operation, which allows the user to erase the entire memory array to the ?1? state. this is useful when the entire device must be quickly erased. the chip-erase operation is initiated by executing a six- byte command sequence with chip-erase command (10h) at address 5555h in the last byte sequence. the erase operation begins with the rising edge of the sixth we# or ce#, whichever occurs first. during the erase operation, the only valid read is toggle bit or data# polling. see table 4 for the command sequence, figure 9 for timing diagram, and figure 20 for the flowchart. any commands issued dur- ing the chip-erase operation are ignored. write operation status detection the sst32hf162/164 provide two software means to detect the completion of a write (program or erase) cycle, in order to optimize the system write cycle time. the soft- ware detection includes two status bits: data# polling (dq 7 ) and toggle bit (dq 6 ). the end-of-write detection mode is enabled after the rising edge of we#, which ini- tiates the internal program or erase operation. the actual completion of the nonvolatile write is asynchro- nous with the system; therefore, either a data# polling or toggle bit read may be simultaneous with the completion of the write cycle. if this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to con- flict with either dq 7 or dq 6. in order to prevent spurious rejection, if an erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. if both reads are valid, then the device has completed the write cycle, otherwise the rejec- tion is valid. flash data# polling (dq 7 ) when the sst32hf162/164 flash memory banks are in the internal program operation, any attempt to read dq 7 will produce the complement of the true data. once the program operation is completed, dq 7 will produce true data. note that even though dq 7 may have valid data immediately following the completion of an internal write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive read cycles after an interval of 1 s. during internal erase operation, any attempt to read dq 7 will pro- duce a ?0?. once the internal erase operation is completed, dq 7 will produce a ?1?. the data# polling is valid after the rising edge of the fourth we# (or bef#) pulse for program operation. for sector- or block-erase, the data# polling is valid after the rising edge of the sixth we# (or bef#) pulse. see figure 8 for data# polling timing diagram and figure 18 for a flowchart. flash toggle bit (dq 6 ) during the internal program or erase operation, any con- secutive attempts to read dq 6 will produce alternating 1s and 0s, i.e., toggling between 1 and 0. when the internal program or erase operation is completed, the toggling will stop. the flash memory bank is then ready for the next operation. the toggle bit is valid after the rising edge of the fourth we# (or bef#) pulse for program operation. for sector- or bank-erase, the toggle bit is valid after the rising edge of the sixth we# (or bef#) pulse. see figure 9 for toggle bit timing diagram and figure 18 for a flowchart.
4 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 flash memory data protection the sst32hf162/164 flash memory bank provides both hardware and software features to protect nonvolatile data from inadvertent writes. flash hardware data protection noise/glitch protection : a we# or bef# pulse of less than 5 ns will not initiate a write cycle. v dd power up/down detection: the write operation is inhibited when v dd is less than 1.5v. write inhibit mode: forcing oe# low, bef# high, or we# high will inhibit the flash write operation. this prevents inadvertent writes during power-up or power-down. flash software data protection (sdp) the sst32hf162/164 provide the jedec approved soft- ware data protection scheme for all flash memory bank data alteration operations, i.e., program and erase. any program operation requires the inclusion of a series of three-byte sequence. the three byte-load sequence is used to initiate the program operation, providing optimal protection from inadvertent write operations, e.g., during the system power-up or power-down. any erase operation requires the inclusion of six-byte load sequence. the sst32hf162/164 devices are shipped with the software data protection permanently enabled. see table 4 for the specific software command codes. during sdp command sequence, invalid sdp commands will abort the device to the read mode, within read cycle time (t rc ). concurrent read and write operations the sst32hf162/164 provide the unique benefit of being able to read from or write to sram, while simultaneously erasing or programming the flash. this allows data alter- ation code to be executed from sram, while altering the data in flash. the following table lists all valid states. the device will ignore all sdp commands when an erase or program operation is in progress. note that product identification commands use sdp; therefore, these com- mands will also be ignored while an erase or program operation is in progress. product identification the product identification mode identifies the devices as the sst32hfxxx and manufacturer as sst. this mode may be accessed by software operations only. the hardware device id read operation, which is typically used by programmers, cannot be used on this device because of the shared lines between flash and sram in the multi-chip package. therefore, application of high voltage to pin a 9 may damage this device. users may use the software product identification operation to identify the part (i.e., using the device id) when using multi- ple manufacturers in the same socket. for details, see tables 3 and 4 for software operation, figure 13 for the software id entry and read timing diagram and figure 19 for the id entry command sequence flowchart. product identificatio n mode exit/reset in order to return to the standard read mode, the software product identification mode must be exited. exiting is accomplished by issuing the exit id command sequence, which returns the device to the read operation. please note that the software reset command is ignored during an internal program or erase operation. see table 4 for soft- ware command codes, figure 14 for timing waveform and figure 19 for a flowchart. design considerations sst recommends a high frequency 0.1 f ceramic capac- itor to be placed as close as possible between v dd and v ss , e.g., less than 1 cm away from the v dd pin of the device. additionally, a low frequency 4.7 f electrolytic capacitor from v dd to v ss should be placed within 1 cm of the v dd pin. c oncurrent r ead /w rite s tate t able flash sram program/erase read program/erase write table 1: p roduct i dentification address data manufacturer?s id 0000h 00bfh device id sst32hf162/164 0001h 2782h t1.2 1171
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 5 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 i/o buffers 1171 b1.1 address buffers dq 15 - dq 8 a ms (1) -a 0 we# superflash memory sram control logic bes# bef# oe# address buffers & latches lbs# ubs# dq 7 - dq 0 f unctional b lock d iagram
6 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 1: p in a ssignments for 48- ball tbga (10 mm x 12 mm ) table 2: p in d escription symbol pin name functions a ms 1 -a 0 1. a ms =most significant address address inputs to provide flash addresses: a 19 -a 0 for 16m sram addresses: a 16 -a 0 for 2m and a 17 -a 0 for 4m dq 15 -dq 0 data input/output to output data during read cycles and receive input data during write cycles. data is internally latched during a flash erase/program cycle. the outputs are in tr i-state when oe# or bes# and bef# are high. bes# sram memory bank enable to activate the sram memory bank when bes# is low. bef# flash memory bank enable to activate the flash memory bank when bef# is low. oe# output enable to gate the data output buffers. we# write enable to control the write operations. v ddf power supply (flash) 2.7-3.3v power supply to flash only. v dds power supply (sram) 2.7-3.3v power supply to sram only v ss ground ubs# upper byte control (sram) to enable dq 15 -dq 8 lbs# lower byte control (sram) to enable dq 7 -dq 0 nc no connection unconnected pins t2.4 1171 bes# a10 oe# a11 a13 we# v ss dq5 dq7 a8 a17 v dds dq1 dq2 dq4 a5 ubs# a16 a1 a0 dq0 dq8 bef# v ss a2 a3 a6 dq3 dq10 dq9 a4 a7 a18 dq12 v ddf dq11 a19 nc nc a12 dq6 dq13 a9 a14 a15 lbs# dq15 dq14 a b c d e f g h sst32hf162/sst32hf164 6 5 4 3 2 1 top view (balls facing down) 1171 48-lbga p1.0
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 7 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 table 3: o peration m odes s election mode bes# 1 bef# 1 oe# we# ubs# lbs# dq 15 to dq 8 dq 7 to dq 0 address not allowed v il v il x 2 xx x x x x flash read v ih v il v il v ih xx d out d out a in program v ih v il v ih v il xx d in d in a in erase x v il v ih v il x x x x sector or block address, xxh for chip-erase sram read v il v ih v il v ih v il v il d out d out a in v il v ih v il v ih v il v ih d out high z a in v il v ih v il v ih v ih v il high z d out a in write v il v ih xv il v il v il d in d in a in v il v ih xv il v il v ih d in high z a in v il v ih xv il v ih v il high z d in a in standby v ihc v ihc x x x x high z high z x flash write inhibit x x v il x x x high z / d out high z / d out x xxxv ih x x high z / d out high z / d out x xv ih x x x x high z / d out high z / d out x output disable v ih v il v ih v ih x x high z high z x v il v ih xxv ih v ih high z high z x v il v ih v ih v ih x x high z high z x product identification software mode v ih v il v il v ih x x manufacturer?s id (00bfh) device id 3 a 19 -a 1 =v il , a 0 =v ih (see table 4) t3.3 1171 1. do not apply bes#=v il and bef#=v il at the same time 2. x can be v il or v ih , but no other value. 3. device id = 2782h for sst32hf162/164
8 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 table 4: s oftware c ommand s equence command sequence 1st bus write cycle 2nd bus write cycle 3rd bus write cycle 4th bus write cycle 5th bus write cycle 6th bus write cycle addr 1 data 2 addr 1 data 2 addr 1 data 2 addr 1 data 2 addr 1 data 2 addr 1 data 2 word-program 5555h aah 2aaah 55h 5555h a0h wa 3 data sector-erase 5555h aah 2aaah 55h 5555h 80h 5555h aah 2aaah 55h sa x 4 30h block-erase 5555h aah 2aaah 55 h 5555h 80h 5555h aah 2aaah 55h ba x 4 50h chip-erase 5555h aah 2aaah 55h 555 5h 80h 5555h aah 2aaah 55h 5555h 10h software id entry 5,6 5555h aah 2aaah 55h 5555h 90h software id exit xxh f0h software id exit 5555h aah 2aaah 55h 5555h f0h t4.3 1171 1. address format a 14 -a 0 (hex),address a 15 can be v il or v ih , but no other value, for the command sequence. 2. dq 15 -dq 8 can be v il or v ih , but no other value, for the command sequence. 3. wa = program word address 4. sa x for sector-erase; uses a ms -a 11 address lines ba x for block-erase; uses a 19 -a 15 address lines a ms = most significant address a ms = a 19 for sst32hf162/164 5. the device does not remain in software product id mode if powered down. 6. with a ms -a 1 = 0; sst manufacturer?s id = 00bfh, is read with a 0 =0, sst32hf162/164 device id = 2782h, is read with a 0 =1. absolute maximum stress ratings (applied conditions greater than t hose listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater t han those defined in the operational sections of this data sheet is not implied. exposu re to absolute maximum stress rating co nditions may affect device reliability.) operating temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20c to +85c storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65c to +150c d. c. voltage on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5v to v dd 1 +0.3v 1. v dd = v ddf and v dds transient voltage (<20 ns) on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0v to v dd 1 +1.0v package power dissipation capability (ta = 25c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0w output short circuit current 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 ma 2. outputs shorted for no more than one second. no more than one output shorted at a time. o perating r ange range ambient temp v dd commercial 0c to +70c 2.7-3.3v extended -20c to +85c 2.7-3.3v ac c onditions of t est input rise/fall time . . . . . . . . . . . . . . 5 ns output load . . . . . . . . . . . . . . . . . . . . c l = 30 pf see figures 15 and 16
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 9 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 table 5: dc o perating c haracteristics (v dd = v ddf and v dds = 2.7-3.3v) symbol parameter limits test conditions min max units i dd power supply current address input=v ilt /v iht, at f=1/t rc min, v dd =v dd max, all dqs open read flash 20 ma oe#=v il , we#=v ih bef#=v il , bes#=v ih sram 30 ma bef#=v ih , bes#=v il concurrent operation 45 ma bef#=v ih , bes#=v il write flash 25 ma we#=v il bef#=v il , bes#=v ih, oe#=v ih sram 30 ma bef#=v ih , bes#=v il i sb standby v dd current 3.0v 3.3v 40 75 a a v dd =v dd max, bef#=bes#=v ihc i li input leakage current 1 a v in =gnd to v dd , v dd =v dd max i lo output leakage current 10 a v out =gnd to v dd , v dd =v dd max v il input low voltage 0.8 v v dd =v dd min v ih input high voltage 0.7v dd vv dd =v dd max v ihc input high voltage (cmos) v dd -0.3 v v dd =v dd max v ol flash output low voltage 0.2 v i ol =100 a, v dd =v dd min v oh flash output high voltage v dd -0.2 v i oh =-100 a, v dd =v dd min v ols sram output low voltage 0.4 v i ol =1 ma, v dd =v dd min v ohs sram output high voltage 2.2 v i oh =-500 a, v dd =v dd min t5.7 1171 table 6: r ecommended s ystem p ower - up t imings symbol parameter minimum units t pu-read 1 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er. power-up to read operation 100 s t pu-write 1 power-up to program/erase operation 100 s t6.0 1171 table 7: c apacitance (ta = 25c, f=1 mhz, other pins open) parameter description test condition maximum c i/o 1 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er. i/o pin capacitance v i/o = 0v 12 pf c in 1 input capacitance v in = 0v 12 pf t7.0 1171 table 8: f lash r eliability c haracteristics symbol parameter minimum spec ification units test method n end 1 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er. endurance 10,000 cycles jedec standard a117 t dr 1 data retention 100 years jedec standard a103 i lt h 1 latch up 100 + i dd ma jedec standard 78 t8.1 1171
10 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 ac characteristics table 9: sram r ead c ycle t iming p arameters symbol parameter sst32hf162/164-70 units min max t rcs read cycle time 70 ns t aas address access time 70 ns t bes bank enable access time 70 ns t oes output enable access time 35 ns t byes ubs#, lbs# access time 70 ns t blzs 1 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er. bes# to active output 0 ns t olzs 1 output enable to active output 0 ns t bylzs 1 ubs#, lbs# to active output 0 ns t bhzs 1 bes# to high-z output 25 ns t ohzs 1 output disable to high-z output 0 25 ns t byhzs 1 ubs#, lbs# to high-z output 35 ns t ohs output hold from address change 10 ns t9.4 1171 table 10: sram w rite c ycle t iming p arameters symbol parameter sst32hf162/164-70 units min max t wcs write cycle time 70 ns t bws bank enable to end-of-write 60 ns t aws address valid to end-of-write 60 ns t asts address set-up time 0 ns t wps write pulse width 60 ns t wrs write recovery time 0 ns t byws ubs#, lbs# to end-of-write 60 ns t odws output disable from we# low 30 ns t oews output enable from we# high 0 ns t dss data set-up time 30 ns t dhs data hold from write time 0 ns t10.4 1171
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 11 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 table 11: f lash r ead c ycle t iming p arameters symbol parameter sst32hf162/164-70 units min max t rc read cycle time 70 ns t be bank enable access time 70 ns t aa address access time 70 ns t oe output enable access time 35 ns t blz 1 bef# low to active output 0 ns t olz 1 oe# low to active output 0 ns t bhz 1 bef# high to high-z output 20 ns t ohz 1 oe# high to high-z output 20 ns t oh 1 output hold from address change 0 ns t11.3 1171 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er. table 12: f lash p rogram /e rase c ycle t iming p arameters symbol parameter min max units t bp word-program time 20 s t as address setup time 0 ns t ah address hold time 30 ns t bs we# and bef# setup time 0 ns t bh we# and bef# hold time 0 ns t oes oe# high setup time 0 ns t oeh oe# high hold time 10 ns t bpw bef# pulse width 40 ns t wp we# pulse width 40 ns t wph we# pulse width high 30 ns t bph bef# pulse width high 30 ns t ds data setup time 30 ns t dh data hold time 0 ns t ida software id access and exit time 150 ns t se sector-erase 25 ms t be block-erase 25 ms t sce chip-erase 100 ms t12.0 1171
12 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 2: sram r ead c ycle t iming d iagram figure 3: sram w rite c ycle t iming d iagram (we# c ontrolled ) 1 a ddresses a mss-0 dq 15-8, dq 7-0 ubs#, lbs# note: we# remains high (v ih ) for the read cycle a mss = most significant sram address oe# bes# t rcs t aas t bes t oes t blzs t olzs t byes t bylzs t byhzs data valid t ohzs t bhzs t ohs 1171 f21.1 t aws a ddresses a mss-0 bes# we# ubs#, lbs# notes: 1. if oe# is high during the write cycle, the outputs will remain at high impedance. 2. if bes# goes low coincident with or after we# goes low, the output will remain at high impedance. if bes# goes high coincident with or before we# goes high, the output will remain at high impedance. because din signals may be in the output state at this time, input signals of reverse polarity must not be applie d. t wps t wrs t wcs t asts t bws t byws t odws t oews t dss t dhs 1171 f27.1 note 2 note 2 dq 15-8, dq 7-0 valid data in
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 13 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 4: sram w rite c ycle t iming d iagram (ubs#, lbs# c ontrolled ) 1 figure 5: f lash r ead c ycle t iming d iagram a ddresses a mss-0 we# bes# t bws t aws t wcs t wps t wrs t asts t byws dq 15-8, dq 7-0 valid data in note 2 note 2 t dss t dhs ubs#, lbs# notes: 1. if oe# is high during the write cycle, the outputs will remain at high impedance. 2. because din signals may be in the output state at this time, input signals of reverse polarity must not be applie d. 1171 f29.0 1171 f18.0 a ddresses a msf-0 dq 15-0 we# oe# bef# t be t rc t aa t oe t olz v ih high-z t blz t oh t bhz high-z data valid data valid t ohz a msf = most significant flash address
14 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 6: f lash we# c ontrolled p rogram c ycle t iming d iagram figure 7: bef# c ontrolled f lash p rogram c ycle t iming d iagram 1171 f04.1 a ddresses a msf-0 dq 15-0 t dh t wph t ds t wp t ah t as t ch t cs bef# sw0 sw1 sw2 5555 2aaa 5555 addr xxaa xx55 xxa0 data internal program operation starts word (addr/data) oe# we# t bp a msf = most significant flash address x can be v il or v ih , but no other value 1171 f05.1 a ddresses a msf-0 dq 15-0 t dh t cph t ds t cp t ah t as t ch t cs we# sw0 sw1 sw2 5555 2aaa 5555 addr xxaa xx55 xxa0 data internal program operation starts word (addr/data) oe# bef# t bp a msf = most significant flash address x can be v il or v ih , but no other value
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 15 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 8: f lash d ata # p olling t iming d iagram figure 9: f lash t oggle b it t iming d iagram 1171 f06.0 a ddresses a msf-0 dq 7 data data# data# data we# oe# bef# t oeh t oe t ce t oes a msf = most significant flash address 1171 f07.0 a ddresses a msf-0 dq 6 we# oe# bef# t oe t oeh t be t oe s two read cycles with same outputs a msf = most significant flash address
16 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 10: we# c ontrolled f lash c hip -e rase t iming d iagram figure 11: we# c ontrolled f lash s ector -e rase t iming d iagram 1171 f25.2 a ddress a msf-0 d 15-0 we# sw0 sw1 sw2 sw3 sw4 sw5 5555 2aaa 2aaa 5555 5555 xx55 xx10 xx55 xxaa xx80 xxaa 5555 oe# ce# six-byte code for chip-erase t sce t wp note: this device also supports ce# controlled chip-erase operation. the we# and ce# signals are interchageable as long as minmum timings are met. (see table 12) a msf = most significant flash address x can be v il or v ih , but no other value 1171 f08.2 a ddresses a msf-0 dq 15-0 we# sw0 note: the device also supports bef# controlled sector-erase operation. the we# and bef# signals are interchangeable as long as minimum timings are met. (see table 12) sa x = sector address a msf = most significant flash address x can be v il or v ih , but no other value sw1 sw2 sw3 sw4 sw5 5555 2aaa 2aaa 5555 5555 xx55 xx30 xx55 xxaa xx80 xxaa sa x oe# bef# six-word code for sector-erase t se t wp
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 17 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 12: we# c ontrolled f lash b lock -e rase t iming d iagram figure 13: s oftware id e ntry and r ead 1171 f17.2 a ddresses a msf-0 d 15-0 we# sw0 sw1 sw2 sw3 sw4 sw5 5555 2aaa 2aaa 5555 5555 xx55 xx50 xx55 xxaa xx80 xxaa ba x oe# bef# six-word code for block-erase t sbe t wp note: the device also supports bef# controlled block-erase operation. the we# and bef# signals are interchangeable as long as minimum timings are met. (see table 12) ba x = block address a msf = most significant flash address x can be v il or v ih , but no other value 1171 f09.2 a ddress a 14-0 t ida dq 15-0 we# sw0 sw1 sw2 mfg id 5555 2aaa 5555 0000 0001 oe# bef# three-word sequence for software id entry t wp t wph t aa 00bf device id xx55 xxaa xx90 note: device id = 2782 for sst32hf162/164 x can be v il or v ih , but no other value.
18 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 14: s oftware id e xit and r eset figure 15: ac i nput /o utput r eference w aveforms figure 16: a t est l oad e xample 1171 f10.2 a ddress a 14-0 dq 15-0 t ida t wp t whp we# sw0 sw1 sw2 5555 2aaa 5555 three-word sequence for software id exit and reset oe# bef# xxaa xx55 xxf0 note: x can be v il or v ih , but no other value. 1171 f11.0 reference points output input v it v iht v ilt v ot ac test inputs are driven at v iht (0.9 v dd ) for a logic ?1? and v ilt (0.1 v dd ) for a logic ?0?. measurement reference points for inputs and outputs are v it (0.5 v dd ) and v ot (0.5 v dd ). input rise and fall times (10% ? 90%) are <5 ns. note: v it - v input te s t v ot - v output te s t v iht - v input high test v ilt - v input low test 1171 f12.0 to tester t o dut c l
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 19 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 17: w ord -p rogram a lgorithm 1171 f13.3 start write data: xxaah address: 5555h write data: xx55h address: 2aaah write data: xxa0h address: 5555h write word address/word data wait for end of program (t bp , data# polling bit, or toggle bit operation) program completed n ote: x can be v il or v ih , but no other valu e
20 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 18: w ait o ptions 1171 f14.0 wait t bp , t sce, or t be program/erase initiated internal timer toggle bit ye s ye s no no program/erase completed does dq 6 match? read same word data# polling program/erase completed program/erase completed read word is dq 7 = true data? read dq 7 program/erase initiated program/erase initiated
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 21 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 19: s oftware p roduct c ommand f lowcharts 1171 f15 .2 write data: xxaah address: 5555h s oftware product id entry command sequence write data: xx55h address: 2aaah write data: xx90h address: 5555h wait t ida read software id write data: xxaah address: 5555h software product id exit & reset command sequence write data: xx55h address: 2aaah write data: xxf0h address: 5555h write data: xxf0h address: xxxxh return to normal operation wait t ida wait t ida return to normal operation note: x can be v il or v ih , but no other value.
22 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 20: e rase c ommand s equence 1171 f26. 2 load data: xxaah address: 5555h chip-erase c ommand sequence load data: xx55h address: 2aaah load data: xx80h address: 5555h load data: xx55h address: 2aaah load data: xx10h address: 5555h load data: xxaah address: 5555h wait t sce chip erased to ffffh load data: xxaah address: 5555h sector-erase command sequence load data: xx55h address: 2aaah load data: xx80h address: 5555h load data: xx55h address: 2aaah load data: xx30h address: sa x load data: xxaah address: 5555h wait t se sector erased to ffffh load data: xxaah address: 5555h block-erase command sequenc e load data: xx55h address: 2aaah load data: xx80h address: 5555h load data: xx55h address: 2aaah load data: xx50h address: ba x load data: xxaah address: 5555h wait t be block erased to ffffh note: x can be v il or v ih , but no other value.
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 23 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 figure 21: c oncurrent o peration f lowchart 1171 f19.0 load sdp command sequence concurrent operation flash program/erase initiated wait for end of write indication flash operation completed end concurrent operation read or write sram end wait
24 eol product data sheet multi-purpose flash (mpf) + sram combomemory sst32hf162 / sst32hf164 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 product ordering information valid combinations for sst32hf162 sst32hf162-70-4c-lbk sst32hf162-70-4c-lbke sst32hf162-70-4e-lbk sst32hf162-70-4e-lbke valid combinations for sst32hf164 sst32hf164-70-4c-lbk sst32hf164-70-4c-lbke sst32hf164-70-4e-lbk sst32hf164-70-4e-lbke note: valid combinations are those products in mass producti on or will be in mass production. consult your sst sales representative to confirm availability of valid combinat ions and to determine availability of new combinations. package attribute e = non-pb package modifier k = 48 leads or balls package type lb = lbga (10mm x 12mm x 1.4mm) temperature range c = commercial = 0c to +70c e = extended = -20c to +85c minimum endurance 4 = 10,000 cycles read access speed 70 = 70 ns density 162 = 16 mbit flash + 2 mbit sram 164 = 16 mbit flash + 4 mbit sram voltage h = 2.7-3.3v product series 32 = mpf + sram combomemory device speed suffix1 suffix2 sst32 h fxx x - xxx -x x -xx x x
eol product data sheet multi-purpose flash (mpf ) + sram combomemory sst32hf162 / sst32hf164 25 ?2005 silicon storage technology, inc. s71171-10-eol 3/05 packaging diagrams 48- ball l ow - profile b all g rid a rray (lbga) 10 mm x 12 mm sst p ackage c ode : lbk table 13: r evision h istory number description date 05 2002 data book may 2002 06 removed ek package for 162 parts replaced tbk package for all parts with the lbk package changed the sram read and sram write parameter from 20 ma to 30 ma sep 2002 07 removed ek package for 164 parts changed 90 ns to 80 ns migrated the 8 mbit parts and mpns from s71171 to s71209 output leakage current increased to 10 a in table 5 on page 9 clarified test conditions for power supply current in table 5 on page 9 apr 2003 08 removed 80 ns parts and mpns aug 2003 09 2004 data book updated lbk package diagram nov 2003 10 end-of-life product data sheet for all parts in s71171 recommended replacement parts are in s71269 ? sst32hf162 is replaced by sst34hf162c ? sst32hf164 is replaced by sst34hf164c mar 2005 h g f e d c b a a b c d e f g h bottom view side view 6 5 4 3 2 1 seating plane 0.40 0.05 1.4 max 0.12 0.50 0.0 5 (48x) 1.0 5.0 1.0 7.0 48-lbga-lbk-10x12-500mic -2 n ote: 1. although many dimensions are similar to those of jedec publication 95, mo-210, this specific package is not registered . 2. all linear dimensions are in millimeters. 3. coplanarity: 0.12 mm 4. ball opening size is 0.4 mm ( 0.05 mm) 6 5 4 3 2 1 1mm top view 10.00 0.20 12.00 0.20 a1 corner a1 corner silicon storage technology, inc. 1171 sonora court sunnyvale, ca 94086 telephone 408-735-9110 fax 408-735-9036 www.superflash.com or www.sst.com

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